AD161.pdf

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INCHANGE Semiconductor
isc
Silicon NPN Power Transistor
AD161
DESCRIPTION
·Wide
Area of Safe Operation
·DC
Current Gain-
: h
FE
=50-350@I
C
= 0.5A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= 0.7V(Max)@ I
C
= 3A
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for general-purpose power switch and amplifier,
consumer and industrial applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
32
20
6
3
4
90
-55~200
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.52
UNIT
℃/W
isc website：
www.iscsemi.cn
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isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CEO
I
CBO
I
EBO
h
FE
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
CONDITIONS
I
C
= 100mA ; I
B
= 0
I
C
= 1mA ; I
E
= 0
I
E
= 1mA ; I
C
= 0
I
C
= 3A; I
B
= 0.3A
I
C
= 3A; I
B
= 0.3A
V
CE
= 50V; I
B
= 0
V
CB
= 32V; I
E
= 0
V
EB
= 7.0V; I
C
=0
I
C
= 0.5A ; V
CE
= 1V
50
MIN
50
50
6
AD161
MAX
UNIT
V
V
V
0.7
1.2
0.1
0.5
10
350
V
V
mA
μA
μA
isc website：www.iscsemi.cn
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