P20NM60.pdf

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STB20NM60-1 - STP20NM60FP
STB20NM60 - STP20NM60 - STW20NM60
N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D
2
/I
2
PAK
MDmesh™ Power MOSFET
Features
Type
STP20NM60
STP20NM60FP
STB20NM60
STB20NM60-1
STW20NM60
■
■
■
■
V
DSS
600V
600V
600V
600V
600V
R
DS(on)
< 0.29Ω
< 0.29Ω
< 0.29Ω
< 0.29Ω
< 0.29Ω
I
D
3
20A
20A
20A
20A
20A
1
D²PAK
TO-247
3
1
2
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Figure 1.
TO-220
1
2
TO-220FP
3
3
12
I²PAK
Applications
■
Internal schematic diagram
Switching applications
Description
The MDmesh™ is a new revolutionary Power
MOSFET technology that associates the multiple
drain process with the company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Table 1.
Device summary
Part number
STP20NM60
STP20NM60FP
STB20NM60T4
STB20NM60-1
STW20NM60
Marking
P20NM60
P20NM60FP
B20NM60
B20NM60-1
W20NM60
Package
TO-220
TO-220FP
D²PAK
I²PAK
TO-247
Packaging
Tube
Tube
Tape & reel
Tube
Tube
August 2007
Rev 12
1/18
www.st.com
18
Contents
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
TO-220/D²PAK
I²PAK/TO-247
600
±30
20
12.6
80
192
1.5
15
--
-65 to 150
150
2500
20
(1)
12.6
(1)
80
(1)
45
0.36
Unit
TO-220FP
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
V
DS
V
GS
I
D
I
D
I
DM (2)
P
TOT
dv/dt
(3)
V
ISO
T
stg
T
j
Drain-source voltage (V
GS
= 0)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T
C
=25°C)
Storage temperature
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
SD
< 20A, di/dt < 400A/µs, V
DD
< V
(BR)/DSS
, Tj < T
JMAX
Table 3.
Symbol
Rthj-case
Rthj-amb
T
l
Thermal resistance
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
TO-220/D²PAK
I²PAK/TO-247
0.65
62.5
300
TO-220FP
2.8
Unit
°C/W
°C/W
°C
Table 4.
Symbol
I
AS
E
AS
Avalanche data
Parameter
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
j
max)
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AS
, V
DD
= 50 V)
Max.
value
10
650
Unit
A
mJ
3/18
Electrical characteristics
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max rating
V
DS
= Max rating,@125°C
V
GS
= ± 30V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10V, I
D
= 10 A
3
4
0.25
Min.
600
1
10
±100
5
0.29
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Table 6.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
C
oss eq. (2)
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 10 A
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
V
GS
= 0V, V
DS
= 0V to
480 V
V
DD
= 480 V, I
D
= 20 A,
V
GS
= 10V
(see Figure 16)
f = 1 MHz Gate DC
bias=0 Test signal
level = 20 mV
open drain
Min.
Typ.
11
1500
350
35
215
39
10
20
54
Max.
Unit
S
pF
pF
pF
pF
nC
nC
nC
R
g
Gate input resistance
1.6
Ω
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
4/18
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
Electrical characteristics
Table 7.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 300 V, I
D
= 10 A
R
G
= 4.7Ω V
GS
= 10 V
(see Figure 15)
Min.
Typ.
25
20
42
11
Max.
Unit
ns
ns
ns
ns
Table 8.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 20 A, V
GS
= 0
I
SD
=20A, di/dt=100A/µs,
V
DD
= 60 V
(see Figure 20)
I
SD
=20A, di/dt=100A/µs,
T
j
= 150°C, V
DD
= 60 V
(see Figure 20)
390
5
25
510
6.5
26
Test conditions
Min
Typ.
Max
20
80
1.5
Unit
A
A
V
ns
µC
A
ns
µC
A
V
SD (2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/18

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