BAT42.PDF

(96 KB) Pobierz
®
BAT 42
BAT 43
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage fast switching.
These devices have integrated protection against
excessivevoltage such as electrostaticdischarges.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
L
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Fordware Current
Surge non Repetitive Forward Current*
Power Dissipation*
Storage and Junction Temperature Range
Maximum Temperature for Soldering during 10s at 4mm from Case
T
a
= 25
°
C
t
p
≤
1s
δ ≤
0.5
t
p
= 10ms
T
l
= 65
°
C
DO 35
(Glass)
Value
30
200
500
4
200
- 65 to +150
- 65 to +125
230
Unit
V
mA
mA
A
mW
°
C
°
C
°
C
THERMAL RESISTANCE
Symbol
R
th(j-a)
Junction-ambient*
Test Conditions
Value
300
Unit
°
C/W
* On infinite heatsink with 4mm lead length
August 1999 Ed: 1A
1/4
BAT 42/BAT 43
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
V
BR
V
F
*
Tj = 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 25
°
C
T
j
= 25
°
C
T
j
= 25
°
C
I
R
*
T
j
= 25
°
C
T
j
= 100
°
C
Test Conditions
I
R
= 100µA
I
F
= 200mA
I
F
= 10mA
I
F
= 50mA
I
F
= 2mA
I
F
= 15mA
V
R
= 25V
BAT 43
0.26
All Types
BAT 42
Min.
30
1
0.4
0.65
0.33
0.45
0.5
100
µ
A
Typ.
Max.
Unit
V
V
DYNAMIC CHARACTERISTICS
Symbol
C
trr
h
T
j
= 25
°
C V
R
= 1V
Tj = 25
°
C I
F
= 10mA
Test Conditions
f = 1MHz
I
R
= 10mA
i
rr
= 1mA
R
L
= 100
Ω
80
Min.
Typ.
7
5
Max.
Unit
pF
ns
%
T
j
= 25
°
C R
L
= 15K
Ω
C
L
= 300pF f = 45MHz V
i
= 2V
δ <
2%.
* Pulse test: t
p
≤
300µs
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
2/4
®
BAT 42/BAT 43
Figure 3. Reverse current versus junction
temperature (typical values).
Figure 4. Reverse current versus continuous
reverse voltage.
Figure 5. Capacitance C versus reverse
applied voltage V
R
(typical values).
®
3/4
BAT 42/BAT 43
PACKAGE MECHANICAL DATA
DO 35 Glass
DIMENSIONS
B
note 1 E
A
B
E note 1
O
C
/
REF.
Millimeters
Min.
Max.
4.50
2.00
Inches
Min.
0.120
0.060
0.500
Max.
0.177
0.079
A
B
O
D
/
note 2
O
D
/
3.05
1.53
12.7
0.458
C
D
0.558
0.018
0.022
Cooling method: by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as criticalcomponents in life support devices or systems withoutexpress written approval
of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
©
1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
4/4
®

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin